Samsung announced that its first generation of the 3nm node has entered the mass production stage. The new GAA (Gate-All-Around) transistor architecture, the advancement following FinFET, serves as its foundation.
Samsung’s first generation 3nm semiconductors can deliver up to 23% greater performance, up to 45% less power consumption and a 16% smaller surface area than 5nm processors.
Even more striking will be Samsung’s second generation 3nm node, which the company claims will reduce power consumption by 50%, enhance performance by up to 30% and reduce space by 35% compared to the 5nm.
TSMC, which is anticipated to start mass producing 3nm circuits in the second part of the year, is now behind Samsung.
The foundry can downsize transistors without compromising their capacity to transport current thanks to the Gate-All-Around (GAA) transistor architecture. The MBCFET variant seen in the figure below represents the GAAFET design utilized at the 3nm node.
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